Seminars Archive

Hydrogen-modified metal-silicon interfaces

Abstract
Wet chemical preparation of well-ordered hydrogen-termi nated silicon surfaces recently led to many new studies of the surface, its oxydation and the formation of metal/semiconductor interfaces based on hydrogen-terminated surfaces in particular. When dealing with hydrogen modified metal-silicon interfaces the key issue is to evaluate the influence of hydrogen-termination on interface formation and to clarify the role of the interfacial hydrogen as a passivating layer or as a surfactant which may be eliminated during interface growth. In this presentation three systematic studies (Au, Al and K on Si(111):H(1x1) using high resolution core-level photoelectron spectroscopy are presented and related to earlier studies for a more general appreciation of hydrogen effect at hydrogen modified metal-silicon interfaces.