Seminars Archive

Controlling electronic and geometrical structure of honeycomb-lattice materials on metal substrates: graphene and h-BN.

Abstract
Graphene, being a hot scientific topic over the last decade needs no vast introduction: due to its remarkable properties it is considered to fill a niche in almost any application of a not-so-far future: from filters and protective covers to nanoelectronic (or even spintronic) devices. To develop these it is especially important to be able to control the electronic structure of graphene, and its structural perfectness. The latter is probably most easily achieved by chemical vapor deposition (CVD) growth of graphene on transition metal (TM) substrates. The understanding of graphene formation on metal substrates and the ability to control the electronic structure of a resultant graphene-metal interface are therefore crucial for the development of graphene-based applications. The present talk revolves around the topic of controlling the electronic structure of graphene/TM by chemical functionalization of graphene or intercalation of active species onto graphene/TM interface. A possibility to employ iron substrates for CVD growth of periodically corrugated graphene, growth mechanism and thermal stability of graphene/Fe are also discussed. In this respect it is informative to report the results for graphene with that for hexagoal boron nitride, the structural "twin" of graphene.