BaDElPh Highlights
- BaDElPh Highlights
- Anomalies at the DP in graphene
- CDW & Kondo effect in a Dirac semimetal
- QWS on bilayer graphene
- Flat band in graphene
- Antiferromagnetic TI
- MoS2 on Gr/Ir(111)
- EAL of low-energy electrons in solids
- SC in few-monolayer MgB2
- SOC induced gap in graphene
- Li-doped black phosphorous
- Rashba coupling amplification in BaNiS2
- High-quality graphene
- EPC and SC in graphene
- Surface-enhanced CDW in UD Bi(2201)
- Origin of electron accumulation in In2O3
- Impurity state in H-Graphene
- Gap and orbital character in Ba(FeCo)2As2
- Surface-umklapp at an organic-metal interface
- Quasiparticles at the Mott transition in V2O3
- All Pages
Flat band in heavily doped graphene
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Using chemical doping via deposition of a large amount of Cs on a monolayer of graphene grown on an Ir(111) surface, a flat band right at the Fermi energy has been introduced in large samples with size >1 cm2. ARPES reveals a strong n-type doping of the graphene close to the saddle point instability. Additionally, the graphene bands are zone-folded into a 2x2 superstructure. This is in line with the observed Cs derived partially filled electron-bands, which are also observed in this 2x2 superstructure state. A flat electronic band is visible in the region of reciprocal space where Cs and graphene bands interact. Combining the experimental results with theoretical calculations, it is shown that the interaction of the doped graphene bands with the alkali metal bands from the Cs |
on the surface is responsible for the flat band formation. The increased DOS could drive phase transitions and a ferromagnetic instability is predicted for this material. Retrieve article Origin of the flat band in heavily Cs-doped graphene N. Ehlen, M. Hell, G. Marini, E.H. Hasdeo, R. Saito, Y. Falke, M.O. Goerbig, G. Di Santo, L. Petaccia, G. Profeta, A. Grüneis, ACS Nano 14, 1055 (2020). doi: 10.1021/acsnano.9b08622 This work was selected as an Elettra Top Story. |
