Single-oriented domains of h-BN on Ir(111)

Using X-ray Photoelectron Diffraction (XPD) we show that, on the Ir(111) surface, ordinary high-temperature borazine deposition gives rise to an h-BN monolayer formed by fcc and hcp antiparallel domains, while h-BN monolayer with single fcc orientation can be synthesized by dosing borazine at room temperature followed by annealing.

F. Orlando et al., ACS Nano 8, 12063 (2014).

The nucleation of rotated phases, giving rise to grain boundaries and other defects, renders the growth of large, single-crystalline h-BN domains still a challenging task. In this study we successfully investigated a CVD method for growing a h-BN monolayer with single orientation on Ir(111) by proper tuning of the synthesis parameters. Using X-ray photoelectron diffraction we demonstrated that a fcc single-domain h-BN monolayer can be synthesized by cyclic dose of borazine onto the metal substrate at room temperature followed by annealing.
In contrast, borazine deposition at high temperature results in a h-BN monolayer formed by opposite-

oriented fcc and hcp domains. Our results provide new insight into the strategies for producing high-quality h-BN monolayers on transition metal surfaces.

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Epitaxial Growth of a Single-Domain Hexagonal Boron Nitride Monolayer;
Fabrizio Orlando, Paolo Lacovig, Luca Omiciuolo, Nicoleta G. Apostol, Rosanna Larciprete, Alessandro Baraldi, and Silvano Lizzit;
ACS Nano 8, 12063-12070 (2014).
Last Updated on Wednesday, 07 September 2016 19:35