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High-quality graphene on single crystal Ir(111) films on Si(111) wafers

The formation of graphene by chemical vapor deposition (CVD) on single crystal Ir(111) films, grown heteroepitaxially on Si(111) wafers with yttria stabilized zirconia (YSZ) buffer layers, has been investigated by ARPES and other spectroscopic and microscopic techniques. Our results highlight the excellent crystalline quality of graphene, comparable to graphene prepared on Ir(111) bulk single crystals. This synthesis route allows for inexpensive growth on standardized disposable substrates, suitable for both optical and electron spectroscopic characterization, which meets the needs of many researchers in the field. Furthermore, this fabrication technique can potentially be scaled towards larger output and, using Si

wafers, can be more easily implemented into standard Si technology than processes based on other supports.

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High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization
C. Struzzi, N.I. Verbitskiy, A.V. Fedorov, A. Nefedov, O. Frank, M. Kalbac, G. Di Santo, M. Panighel, A. Goldoni, J. Gärtner, W. Weber, M. Weinl, M. Schreck, Ch. Wöll, H. Sachdev, A. Grüneis, L. Petaccia,
Carbon 81, 167 (2015).
doi: 10.1016/j.carbon.2014.09.045

Ultima modifica il Domenica, 31 Gennaio 2021 15:32