Elettra-Sincrotrone Trieste S.C.p.A. website uses session cookies which are required for users to navigate appropriately and safely. Session cookies created by the Elettra-Sincrotrone Trieste S.C.p.A. website navigation do not affect users' privacy during their browsing experience on our website, as they do not entail processing their personal identification data. Session cookies are not permanently stored and indeed are cancelled when the connection to the Elettra-Sincrotrone Trieste S.C.p.A. website is terminated.
More info
OK

BaDElPh Highlights

Origin of electron accumulation in In2O3


Angle-resolved photoemission spectroscopy at low photon energy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrödinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent oxides has significant implications  in the realization of devices based on these compounds.

Retrieve article
Microscopic Origin of Electron Accumulation in In2O3
K.H.L. Zhang, R.G. Egdell, F. Offi, S. Iacobucci, L. Petaccia, S. Gorovikov, P.D.C. King,
Phys. Rev. Lett. 110, 056803 (2013).
doi: 10.1103/PhysRevLett.110.056803

This paper was selected as an Elettra Top Story.
Last Updated on Monday, 25 March 2019 16:23