Seminars Archive
Fri 13 Nov, at 09:00 - Seminar Room T2
Spectromicroscopy of Semiconductor Interfaces
Jorge Almeida Garcia
Institut de Physique Appliquee, Ecole Polytechnique Federale, Lausanne, Switzerland
Institut de Physique Appliquee, Ecole Polytechnique Federale, Lausanne, Switzerland
Abstract
We studied microscopical lateral variations of metal-semiconductor interface parameters with spatially-resolved photoemission techniques. The combination of laboratory-based photon sources and synchrotron radiation reveals the relative role of the local chemistry and morphology in determining the barrier height. These experiments reevaluate the notion of Schottky-like and reactive interfaces and confirm the idea that interface barriers have local character, contrary to how their effects are treated in virtually all theories of interface properties.
Last Updated on Tuesday, 24 April 2012 15:21