Seminars Archive
Stefano Cabrini
Abstract
Wednesday, March 21, 2001, 9:00
Seminar Room, ground floor, Building "T"
Sincrotrone Trieste, Basovizza
Electron beam and X-ray lithography: principles and applications
Stefano Cabrini
ABSTRACT
For the future development of nano-technologies it is essential to
have efficient systems for high-resolution lithography. The electron beam
(EBL) provides a versatile system for direct writing of large areas with
a very high resolution. By changing some of the parameters, like acceleration
energy,current probe and beam shape, one can optimize the right configuration
for a large number of applications. EBL is a high-resolution sequential
writing system for thin photo-resist layers but it is less efficient when
used on thick layers and large and dense patterns. The x-ray lithography
arrives exactly where the EBL leaves lacunas; by providing a good mask
(realized by EBL) one can obtain very high resist thickness with a respectable
resolution. A large amount of applications are possible by the combination
of these two different and very complex systems. Only with this Ñensemble
â is it possible to create: Diffractive Optical Elements for visible light
and X-rays, MEMS, several Micro-optic devices , in addition to Photonic
Crystals.
