Seminars Archive
Electronic structure investigations of strongly correlated compound systems.
Institute of Scientific and Industrial Research, Osaka University, Japan and Max-Planck-Institute for Microstructure Physics, Halle, Germany
Abstract
Combination of high resolution photoelectron spectroscopy (PES) such as hard X-ray PES (HAXPES [1,2], soft X-ray PES and ARPES (SX(AR)PES [3]) as well as extremely low energy PES (ELEPES [4,5]) is becoming very popular nowadays.
Although HAXPES benefits a lot from a long enough inelastic mean free path of photoelectrons, facilitating to reveal the genuine bulk electronic structure, versatile recoil behaviors [6,10] must be carefully checked. In SXPES, attention should be paid to evaluate the relative bulk and surface spectral weights by means of hν and/or emission angle dependent measurements [3]. Three-dimensional band mapping and Fermiology are feasible owing to the increased inelastic mean free path of photoelectrons in the SXARPES above hν~500 eV [11]. Several new features not revealed by conventional ARPES below hν<200 eV can be studied with high accuracy.
Though ELEPES below hν≤12 eV was thought to be more bulk sensitive with the decrease in hν, this trend is strongly material- and experimental condition-dependent [4,5]. Some examples with high and low bulk sensitivity are reported.
Ultimate bulk sensitivity with high energy resolution is realized in SX-RIXS with photon-in and photon-out technique. Progress of SX-RIXS is discussed in the case of V oxides [12].
References
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10. S. S. et al., Phys. Rev. B 86, 035146 (2012).
11. M. Yano, A. Sekiyama, S. S. et al., Phys. Rev. Lett. 98, 036405(2007).
12. H. Fujiwara, S. S. et al., to be published.
