Structure and Morphology of PDI8CN2 for n-Type Thin-Film Transistors

Schematic drawing of the crystal structure of PDI8CN2. 2D-GIXD experimental images of 100nm-thick PDI8CN2 film grown at 120°C and simulated 2D-GIXD image reproduced by using the bulk structure and [001] texturing. Copyright 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Liscio F. et al., Adv. Funct. Mater. 22, 943 (2012)
We report a multiscale investigation of N,N’-bis(n-octyl)-x:y,dicyanoperylene-3,4:9,10-bis(dicarboximide), PDI8CN2,n-type semiconductor, consisting in the characterization of the crystallographic structure and morphology of molecular films.
GIXRD (Grazing Incidence X Ray Diffraction) and AFM (AtomicForce Microscopy) measurements reveal that the crystalline orderand the growth mechanism of PDI8CN2 films depend on the deposition temperature. We show how these features are highly correlated with the electrical response of PDI8-CN2-based
field-effect transistors.

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Structure and Morphology of PDI8-CN2 for n-Type Thin-Film Transistors; Liscio F., Milita S., Albonetti C., D’Angelo P., Guagliardi A., Masciocchi N., Della Valle R.G., Venuti E., Brillante A. and Biscarini F., Adv. Funct. Mater. 22, 943 (2012); doi: 10.1002/adfm.201101640

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