Elettra-Sincrotrone Trieste S.C.p.A. website uses session cookies which are required for users to navigate appropriately and safely. Session cookies created by the Elettra-Sincrotrone Trieste S.C.p.A. website navigation do not affect users' privacy during their browsing experience on our website, as they do not entail processing their personal identification data. Session cookies are not permanently stored and indeed are cancelled when the connection to the Elettra-Sincrotrone Trieste S.C.p.A. website is terminated.
More info

Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111)

The Rashba effect as an electrically tunable spin-splitting is anticipated to be the key for semiconductor-based spintronics. It has been pursued in semiconductor heterostructures, where advanced experiments found tunable spin signals at low temperature.
 M. Liebmann et al.,   Advanced Materials (2015), doi: 10.1002/adma.201503459


Recently, bulk spin splittings came back into focus and bulk Rashba bands have been found in the layered polar semiconductors BiTeCl and BiTeI. While these Rashba bands are not tunable by external fields, an electrically switchable bulk-Rashba system has been discovered theoretically: the room-temperature ferroelectric semiconductor GeTe (Curie temperature: ≈700 K, polarization: 64–70 μC cm−2). Such a material would lead to a nonvolatile control of the Rashba induced spin precession and appears to be scalable, since the ferroelectricity in GeTe persists down to the nm-scale. In addition, the large separation of the two spin branches by about 0.19 Å−1 implies a complete rotation of spins within ≈3.5 nm only (Rashba parameter α ≈ 5 eV Å) pointing to a small footprint of possible spin-transistors.

Retrieve article
Advanced Materials (2015), doi: 10.1002/adma.201503459

Last Updated on Friday, 22 April 2016 11:08