Elettra-Sincrotrone Trieste S.C.p.A. website uses session cookies which are required for users to navigate appropriately and safely. Session cookies created by the Elettra-Sincrotrone Trieste S.C.p.A. website navigation do not affect users' privacy during their browsing experience on our website, as they do not entail processing their personal identification data. Session cookies are not permanently stored and indeed are cancelled when the connection to the Elettra-Sincrotrone Trieste S.C.p.A. website is terminated.
More info

XRD1 Highlights

PDI8CN2 for n-Type Thin-Film Transistors

Schematic drawing of the crystal structure of PDI8CN2. 2D-GIXD experimental and simulated images. Copyright 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multiscale investigation of N,N’-bis(n-octyl)-x:y, dicyanoperylene-3,4:9,10-bis(dicarboximide), PDI8CN2, n-type semiconductor, consisting in the characterization of the crystallographic structure and morphology of molecular films.GIXRD (Grazing Incidence X Ray Diffraction) and AFM (AtomicForce Microscopy) measurements reveal that the crystalline order and the growth mechanism of PDI8CN2 films depend on the deposition temperature.

We show how these features are highly correlated with the electrical response of PDI8-CN2-based

field-effect transistors.

Retieve Article

Structure and Morphology of PDI8-CN2 for n-Type Thin-Film Transistors; Liscio F., Milita S., Albonetti C., D’Angelo P., Guagliardi A., Masciocchi N., Della Valle R.G., Venuti E., Brillante A. and Biscarini F., Adv. Funct. Mater. 22, 943 (2012); doi: 10.1002/adfm.201101640

Ultima modifica il Lunedì, 15 Luglio 2019 13:50